1200V常开型4H-SiC VJFET  

1200 V Normally-on 4H-SiC VJFET

作　　者：倪炜江[1] 李宇柱[1] 李哲洋[1] 李赟[1] 管邦虎[1] 陈征[1] 柏松[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所单片集成电路和模块国家级重点实验室,南京210016

出　　处：《固体电子学研究与进展》2011年第2期103-106,共4页Research & Progress of SSE

摘　　要：用沟槽和离子注入方法在自主外延的4H导通型碳化硅晶圆上研制了垂直沟道结型场效应晶体管(VJFET)。在栅电压VG=-10 V时阻断电压达到1 200 V;在VG=2.5 V,VD=2V时的电流密度为395 A/cm2,相应的比导通电阻为5.06 mΩ·cm2。分析发现欧姆接触电阻是导通电阻的重要组成部分,改善欧姆接触可以进一步降低导通电阻。A vertical channel junction field effect transistor（VJFET） was fabricated based on in-house SiC epitaxy with trenched and implanted method.Its blocking voltage is up to 1 200 V at gate bias VG=-10 V and drain current density is 395 A/cm2 at VG=2.5 V and VD=2 V,with related specific on-resistance 5.06 mΩ·cm2.Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance.The specific on-resistance can be further reduced by improving ohmic contact.

关 键 词：4H碳化硅 常开型 垂直沟道结型场效应晶体管 比导通电阻 

分 类 号：TN386[电子电信—物理电子学]