3英寸CdTe/Si复合衬底外延技术研究  

Study on MBE CdTe layer on 3 inch silicon substrate

作　　者：周立庆[1] 刘铭[1] 巩锋[1] 董瑞清[1] 折伟林[1] 常米[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2011年第5期537-541,共5页Laser & Infrared

摘　　要：报道了采用分子束外延法,在3 in硅衬底上通过As钝化、ZnTe缓冲层生长、CdTe生长、周期性退火等工艺进行CdTe/Si复合衬底制备技术研究情况,采用光学显微镜、X射线高分辨衍射仪、原子力显微镜、红外傅里叶光谱仪和湿化学腐蚀等手段对碲化镉薄膜进行了表征,测试分析结果表明碲化镉薄膜的晶向得到了较好的控制,孪晶得到了抑制,且具有较好晶体结构质量和均匀性。CdTe（211）B films were grown by molecular beam epitaxy on As-passivated nominal three-inch Si（211）wafer using thin interfacial ZnTe（211）B buffer layer,and in-situ cyclic annealing has been used during CdTe deposition to improved crystal quality.The CdTe films were characterized with Optical microscopy,X-ray diffraction,AFM,FTIR and wet chemical defect etching.The results indicate that the CdTe（112）B films has good crystal quality,excellent uniformity over three-inch area,twin-free and the crystalline orientation is controlled.

关 键 词：碲化镉 硅基 分子束外延 

分 类 号：TN214[电子电信—物理电子学]