GaAs MESFETs欧姆接触的快速评估和改进  

Rapid Evaluation and Improvement of GaAs MESFETs Ohmic Contacts

作　　者：张万荣 李志国[1] 穆甫臣[1] 孙英华[1] 程尧海[1] 陈建新[1] 沈光地[1] 穆杰[2] 

机构地区：[1]北京工业大学电子工程系,北京100022 [2]石家庄信息产业部河北半导体研究所,石家庄050051

出　　处：《北京工业大学学报》1999年第3期1-4,共4页Journal of Beijing University of Technology

基　　金：国防科工委"九.五"军事预研基金;北京市科技新星计划!9528719007

摘　　要：提出了金属-半导体欧姆接触退化的快速评估方法-温度斜坡快速评价法，并建立了自动评估系统，用该方法和系统测得的欧姆接触退化激活能，和传统方法相比，耗时少，所需样品少，所得结果和传统方法一致．同时，针对传统AuGeNi／Au欧姆接触系统的缺点，提出了加TiN扩散阻挡层的新型欧姆接触系统．实验表明，新型欧姆接触系统的可靠性远远优于传统AuGeNi／Au欧姆接触系统．A rapid evaluation method, temperature ramp method, for GaAs MPFETsohmic contacts is proposed, and an automatic evaluation system is developed. Throughthis method and system, the activation energy for ohmic contacts degradation can beobtained at shorter time and less sample-cost compared with the traditional method, andthe results are in agreement with those obtained by traditional methods. In accordancewith the drawbacks of traditional AuGeNi/Au ohmic contacts, a new ohmic contactssystem with TiN diffusion banter layer is proposed. Experiment results show that thereliability of ohmic contacts with TiN are greatly superior to that of traditionalAuGeNi/Au ohmic contacts.

关 键 词：MESFET 欧姆接触 激活能 扩散阻挡层 砷化镓 

分 类 号：TN386.3[电子电信—物理电子学]