高压LDMOS晶体管宏模型及栅电荷建模方法  

HV LDMOS Macro Model and Modeling of Gate Charge

作　　者：田飞飞[1] 吴郁[1] 胡冬青[1] 刘钺杨[1] 

机构地区：[1]北京工业大学,北京100124

出　　处：《现代电子技术》2011年第10期163-165,168,共4页Modern Electronics Technique

摘　　要：针对标准MOSFET的BSIM4模型在高压LDMOS建模及已有LDMOS紧凑模型的不足,提出一种LDMOS宏模型。在本研究中,借助Spectre软件分别对宏模型与BSIM4器件模型进行仿真,并对2种LDMOS器件模型下的CV结果进行对比,验证了宏模型对LDMOS器件模拟的准确性。最后,提出利用栅电荷曲线来进一步修正模型参数的新方法,并通过仿真获得更精确的LDMOS器件模型。该宏模型及栅电荷建模方法对于高压功率集成电路设计及仿真有重要意义。A macro model of high-voltage power LDMOS is introduced. The macro model and BSIM4 model are simulated respectively by Spectre, and the CV results under these two LDMOS models are compared. A new way to fix the model parameters by using the gate charge curves is proposed, and through simulation, a more accurate LDMOS device model can be acquired. This macro model for LDMOS and the new gate charge modeling method are significant for the design and simulation of the high-voltage power ICs.

关 键 词：器件建模 高压LDMOS 宏模型 栅电荷 

分 类 号：TN919-34[电子电信—通信与信息系统]