不同工艺制备的铁电薄膜底电极Pt/Ti  

Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering

作　　者：宋志棠[1] 曾建明[1] 高剑侠[1] 张苗 林成鲁[1] 

机构地区：[1]中国科学院上海冶金所,上海200050

出　　处：《稀有金属材料与工程》1999年第5期305-309,共5页Rare Metal Materials and Engineering

基　　金：国家"863"!715-002-0110;国家自然科学基金!6973020

摘　　要：采用高真空电子束蒸发与直流溅射在SiO2／Si基底上制备Pt／Ti底电极，对Pt／Ti在不同热处理温度下的结构与形貌进行对比研究。结果表明：由于采用不同的制备工艺，Pt晶粒在成核与生长方式上有所不同，导致了Pt薄膜在结构与形貌的差异。高真空电子束蒸发的Pt薄膜以织构的方式生长，致密而规则的柱状晶粒决定了它在高温下的连续性和稳定性，为制备高质量的铁电薄膜与其性能的研究提供了条件。The microstructures and morphologies 0f Pt/Ti electrodes produced by ultra-high vacuum (UHV) electron beam evaporating and dc-sputtering at various temperatures have been investigated using X-ray diffraction, scanning electron microscopy and atomicforce microscopy. The results indicate that the microstructures and morphologies of Pt/Ti electrodes are dependent on the variousgrowing modes of Pt/Ti crystal grains. A dense columnar grain structure and texture were observed as a resu1t of electron beam vaporation. UHV electron beam evaporation results in a continuous and stable Pt/Ti film at high temperatures and is reccomended as a bottom electrode processing method for the preparation of ferroelectric thin films with fine properties.

关 键 词：薄膜 织构 底电极 铁电薄膜 铂 

分 类 号：TN384[电子电信—物理电子学] O484[理学—固体物理]