MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响  

C-V Characteristics of Ferroelectric Thin Film Systems with MF(I)S Structures on Si

作　　者：于军[1] 董晓敏 赵建洪 周文利[1] 谢基凡[1] 郑远开[1] 刘刚[1] 

机构地区：[1]华中理工大学电子科学与技术系,武汉430074

出　　处：《无机材料学报》1999年第4期613-617,共5页Journal of Inorganic Materials

基　　金：国家自 然科学基金

摘　　要：为制备符合铁电场效应晶体管（ Ｆ Ｆ Ｅ Ｔ） 及铁电存储二极管（ Ｆ Ｍ Ｄ） 要求的高质量铁电薄膜，采用 Ｐ Ｌ Ｄ （ Ｐｕｌｓｅｄ Ｌａｓｅｒ Ｄｅｐｏｓｉｔｉｏｎ） 工艺， 制备了不同 Ｍ Ｆ （ Ｉ） Ｓ 结构的硅基铁电薄膜系统由 Ｃ－ Ｖ特性的对比分析可见， 影响 Ｃ－ Ｖ 特性的主要因素除了衬底类型、界面特性之外， 还有薄膜的结构设计在此基础上， 为改善铁电薄膜的 Ｃ－ ＶIn order to fabricate high quality ferroelectric thin films qualified for Ferroelectric Field Effect Transistors (FFETs) and Ferroelectric Memory Diodes (FMDs), different ferroelectric thin film systems, with the structure of MF (I) S, were deposited by using the pulsed laser deposition technique The C-V characteristics of them were analyzed with comparison The results showed that the primary factors having effect on C-V characteristics included configuration designs of the thin films in addition to the substrate type and the interface properties of the systems Based on the above results, practicable thoughts to improve the C-V characteristics of ferroelectric thin films were presented

关 键 词：铁电薄膜 C-V特性 PLD法 二极管 存储器 

分 类 号：TN304.055[电子电信—物理电子学] TM221.014[一般工业技术—材料科学与工程]