注入剂量对离子注入法制备Al-N共掺杂P型ZnO的影响  

Effect of Implanted Dose on Properties of Al-N Co-doped p-type ZnO Films Prepared by Plasma Immersion Ion Implantation

作　　者：杜记龙[1] 江美福[1] 张树宇[2] 王培君[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006 [2]复旦大学现代物理研究所,上海200433

出　　处：《材料科学与工程学报》2011年第1期42-45,16,共5页Journal of Materials Science and Engineering

摘　　要：采用射频磁控共溅射的方法制备出ZnO∶Al薄膜,以NO和O2为源气体(O2/O2+NO=75%)、等离子体浸没离子注入(PIII)方法在不同的工艺条件下得到了不同N+注入剂量的ZnO∶Al∶N薄膜,并在N2氛围下对样品进行了850℃退火处理。通过XRD图谱、霍尔效应(Hall)测试结果、光致发光光谱(PL)、紫外-可见光透射光谱等对样品的结构和性能进行了分析,着重研究了N+注入剂量对ZnO∶Al∶N薄膜性质的影响。结果表明,注入剂量控制在1015cm-2量级时,N可以通过占据O空位和替换O原子形成NO并与Al和Zn成键,对于ZnO薄膜实现p型反转是很关键的。实现p型反转的ZnO∶Al∶N薄膜载流子浓度可达2.16×1016cm-3,电阻率为8.90Ω.cm,霍耳迁移率为32.4cm2/V.s。ZnO∶Al films were prepared by using a radio-frequency（RF） magnetron co-sputtering system,and then ZnO∶Al∶N films were synthesized by using the plasma immersion ion implantation（PIII） method with NO and O_2 as source gases （O_2/（O_2＋NO）=75%） and annealed in N_2 at 850℃.The structure,electrical and optical properties of the ZnO∶Al∶N films were studied with the help of X-ray Diffractometer（XRD）,Hall effect test system,Photoluminescence（PL） spectrometer and UV-visible spectrometer.The results indicate that when the implantation dose was about 10^（15）cm^（-2） the N atoms exist in the films as acceptors and form N-Al and N-Zn bonds by occupying the O vacancies（V_O） and substituting O atoms and implantation dose of 10^（15）cm^（-2） order is a pivotal parameter to achieve p-type ZnO∶Al∶N films.The carrier concentration,Hall mobility and resistivity of the p-type ZnO∶Al∶N films are 2.16×10^（16） cm^（-3）,32.4 cm^2/V·s and 8.90 Ω·cm,respectively.The effect of the N~＋ implantation dose on the structure,electrical and optical properties of ZnO∶Al∶N films were studied.

关 键 词：等离子体浸没离子注入 磁控溅射 共掺杂 p-ZnO 

分 类 号：O484[理学—固体物理]