提高微波功率双极晶体管性能的研究  

Research on the Improvment of Performances for Microwave Power Bipolar Transistors

作　　者：王建志[1] 藩宏菽[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第6期443-445,共3页Semiconductor Technology

摘　　要：通过对硅S波段微波功率双极晶体管的结终端技术实验数据对比和晶体管镇流电阻设计的考虑,提高了微波功率双极器件的击穿电压和电流通过能力及抗烧毁能力。微波器件采用这些技术后,器件的工作频率不但没有降低,反而从原来的S波段的低端(2.25～2.55 GHz),提高到了中高端(3.1～3.5 GHz);器件的集电结反向击穿电压50 V以上的比率由原来的17.6%提高到63.5%;器件的功率增益也从6 dB提高到7.5 dB以上,证明了该工艺方法的有效性与可行性。The breakdown voltage,current capability and anti-burnout ability of Si bipolar power transistor with shallow junction structure were improved by high breakdown voltage design,ballast resistor design,outer base doping and internal matched circuit consideration.The operating frequency of the microwave transistor fabricated based on high breakdown voltage design is not decreased.On the contrary,its operating frequency increases from original S-band low range（2.25-2.55 GHz） to S-band middle-high range（3.1-3.5 GHz）.The ratio of breakdown voltage over 50 V improves from 17.6% to 63.5%,and the power gain increases from 6 dB to 7.5 dB above.The availability and feasibility of this method were proved.

关 键 词：微波 功率晶体管 浅结 击穿电压 镇流电阻 

分 类 号：TN322.8[电子电信—物理电子学]