ZnCdSe单量子阱中点缺陷附近由非辐射载子复合激活的点缺陷反应  

POINT DEFECT REACTION ACTIVATED BY NONRADIATIVE CARRIER RECOMBINATION AT THE SITE IN A ZnCdSe SINGLE QUANTUM WELL

作　　者：唐敏学[1] 沈凯[2] 

机构地区：[1]苏州大学信息光学工程研究所,苏州215006 [2]美国纽约市立大学研究生院和市产学院电子工程系,138街和康温特大道纽约10031

出　　处：《苏州大学学报（自然科学版）》1999年第4期57-60,共4页Journal of Soochow University(Natural Science Edition)

摘　　要：本文对ＺｎＣｄＳｅ单量子阱中点缺陷附近由非辐射载子复合而激活的点缺陷反应作了研究．样品在不同温度下对荧光光谱随时间变化的测量表明，这种反应增强了辐射量子效率．实验结果与温度相关的点缺陷状态跃迁率模型相吻合，并得到该跃迁的激活能为０．４５ｅｖ．Point defect reaction activated by nonradiahve carrier recombination at the vicinities of point defects has been studied in a ZnCdSe single quantum well. This reaction enhances rediative qua- ntum efficiency probed by spectrally integrated PL intensity as a function of measurement time at vari- ous sample temperatures. The experimental results are in good agreement with a model that incorporates a temperature dependent point defect state transition rate The activation energy for the state transition is found to be 0. 45eV.

关 键 词：ZNCDSE 单量子阱 非辐射载子复合 点缺陷 半导体 

分 类 号：TN304.26[电子电信—物理电子学] O474[理学—半导体物理]