未掺杂半绝缘LECGaAs费米能级和EL2电离率温度关系  

Temperature Dependence of the Fermi Level and the EL2 Ionized Fraction in Undoped LECSIGaAs

作　　者：贾晓华 杨瑞霞[2] 于海霞[2] 张富强[2] 

机构地区：[1]天津市红桥区职工大学,天津300131 [2]河北工业大学

出　　处：《河北工业大学学报》1999年第5期59-63,共5页Journal of Hebei University of Technology

摘　　要：在２８４Ｋ～４５５Ｋ温度范围内，对未掺杂半绝缘ＬＥＣＧａＡｓ样品进行了霍尔一范德堡测量．根据实验数据计算了费米能级和深施主缺陷ＥＬ２电离率的温度关系．发现计算结果与标准ＬＥＣＳＩＧａＡｓ样品有明显差别．这种差别可能是由于样品中存在杂质和缺陷不均匀分布引起的长程势波动．Hall-van der Pauw measurements have been carried oUt for undoped LECSIGaAs samples over the 284K^455K range. The temperature dependence of the Fermi level and the EL2 ionized fraction for these samples have been calculated from the measured data. The experimental results show a considerable deplore from the situation eXPected for standard undopedLECSIGaAs CryStals. It is likely that this departure originates from the long-range potelltial fluctuations due to the inhomogeneous distriblltions of defects and impurities.

关 键 词：EL2 费米能级 砷化镓 半绝缘 缺陷 电离率 温度 

分 类 号：TN304.23[电子电信—物理电子学] O474[理学—半导体物理]