晶体Si片切割表面损伤及其对电学性能的影响  

Surface Damage of Crystalline Silicon Wafers and Their Effects on Electrical Properties

作　　者：蔡二辉[1] 汤斌兵[1] 周剑[1] 辛超[1] 周浪[1] 

机构地区：[1]南昌大学太阳能光伏学院,南昌330031

出　　处：《半导体技术》2011年第8期614-618,共5页Semiconductor Technology

摘　　要：对比观察了不同工艺条件下金刚石线锯和砂浆线锯切割晶体Si片的表面微观形貌;分析了其切割机理及去除模式;对比分析了三种不同化学方法钝化Si片的效果和稳定性;采用逐层腐蚀去除Si片的损伤层,使用碘酒对其进行化学钝化,然后测试其少子寿命,分析Si片少子寿命随去除深度的变化趋势,根据Si片少子寿命达到最大值时的腐蚀深度,测试确定Si片的损伤层厚度。经实验测得,砂浆线锯切割Si片的损伤层厚度为10μm左右,金刚石线锯切割Si片的损伤层厚度为6μm左右。结果表明,相比于砂浆线锯切割Si片,金刚石线锯切割Si片造成的表面损伤层更浅,表面的机械损伤也更小。The micro-morphologies of the cut surface by diamond wire saws and wire-slurry saws on the different condition were examined,and the cutting mechanisms and mode were analyzed respectively.The effect and stability of three chemical passivation methods were investigated.Silicon wafers were etched layer by layer and passivated by iodine,followed by minority carrier lifetimes measurement after each etching.According to the depth-profiles of the lifetimes,the depth at the maximum lifetime,and the depths of surface damage of different cutting wafers are acquired.The depth of surface damage of silicon wafers by wire-slurry saws is found to be about 10 μm,and the depth by diamond wire saws is found to be about 6 μm.It is shown that,surface damage of the silicon wafers cutting by diamond wire saws is less than that by wire-slurry saws.

关 键 词：硅片 切割 表面损伤 少子寿命 钝化 

分 类 号：TN305.1[电子电信—物理电子学]