铝膜沉积温度对铝诱导结晶化多晶硅薄膜性能的影响  

Influence of Aluminum Deposition Temperature on the Property of Polycrystalline Silicon Films by Aluminum-Induced Crystallization

作　　者：陈海力[1] 沈鸿烈[1] 张磊[1] 杨超[1] 刘斌[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《电子器件》2011年第4期370-373,共4页Chinese Journal of Electron Devices

基　　金：国家863计划项目(2006AA03Z219)

摘　　要：以超白玻璃为衬底,采用热丝化学气相沉积法沉积初始非晶硅膜,经自然氧化形成二氧化硅层,最后利用磁控溅射法在不同衬底温度下沉积铝膜,制备了glass/Si/SiO_2/Al叠层结构并对其进行铝诱导晶化形成多晶硅薄膜。用X射线衍射,光学显微镜和拉曼光谱对样品进行了分析。结果表明,铝诱导晶化制备的多晶硅薄膜的晶粒大小随着铝膜沉积温度的升高而变小,且晶化能力及结晶质量也逐渐变差,当铝膜沉积温度升高至200℃以上时甚至不发生铝诱导晶化现象。It was studied that the property of the polycrystalline silicon films was influenced by the aluminum depossition temperature in process of the Aluminum-Induced Crystallization （AIC）. Initial amorphous silicon films were deposited on the ultra-white glass substrate by hot wire chemical vapor deposition and then were subjected to air oxidation. After initial Al films were deposited by magnetron sputtering at different temperature, a-Si/SiO2/A1 muhilayer structure was formed. Then α-Si film in the a-Si/SiO2/Al structure was induced to form a polyerystalline silicon film by Aluminum-Induced Crystallization process. The induced films were characterized with X-ray diffraction, optical microscopy and Raman spectroscopy. The results showed that as the aluminum deposition temperature rose,the grain size of the polycrystalline silicon decreased after annealing and the crystallization ability and quality degraded. When the aluminum deposition temperature reached above 200℃, AIC phenomenon could not occur.

关 键 词：铝膜沉积温度 铝诱导晶化 多晶硅薄膜 磁控溅射 

分 类 号：O484.1[理学—固体物理] TN304.55[理学—物理]