0.5μm AlGaN/GaN HEMT及其应用  

0.5 μm AlGaN/GaN HEMT and Its Application

作　　者：任春江[1] 王泉慧[1] 刘海琪[1] 王雯[1] 李忠辉[1] 孔月婵[1] 蒋浩[1] 钟世昌[1] 陈堂胜[1] 张斌[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2011年第5期433-437,共5页Research & Progress of SSE

摘　　要：报道了采用I线步进光刻实现的76.2 mm SiC衬底0.5μm GaN HEMT。器件正面工艺光刻均采用了I线步进光刻来实现,背面用通孔接地。栅脚介质刻蚀采用一种优化的低损伤RIE刻蚀方法实现了60°左右的侧壁倾斜角,降低了栅脚附近峰值电场强度,提高器件性能和可靠性。研制的GaN HEMT器件fT为15 GHz,fmax为24 GHz,6 GHz下的MSG为17 dB,满足C波段及以下频段应用要求。对1.25 mm栅宽GaN HEMT在2 GHz、28 V工作电压下的负载牵引,最佳功率匹配的功率附加效率66%,对应输出功率以及功率增益分别为38.0 dBm和17.3 dB。对大栅宽GaN HEMT器件的版图进行了优化以利于散热,并将其应用于输出功率60 W的L波段功率模块末级开发。0.5 μm GaN HEMT on 76.2 mm SiC substrate by I-line stepper lithography technology is presented.The developed GaN HEMT was fully realized by I-line stepper lithography and backside via hole for grounding was adopted.An optimized low damage RIE etch recipe was introduced to realize a slant sidewall of 60° for gate foot,which would improve performance and reliability of the GaN HEMT resulted from reducing peak electric field near the gate foot.The fabricated GaN HEMT exhibited an fT of 15 GHz,an fmax of 24 GHz,and a MSG of 17 dB at 6 GHz and is suitable for microwave application at C band and below.Load-pull measurements were carried on 1.25 mm gate width GaN HEMT at 2 GHz and 28 V operation voltage,a peak power added efficiency（PAE） of 66% with associated power and power gain of 38.0 dBm and 17.3 dB,respectively,was achieved.Large gate periphery GaN HEMT with optimized layout for thermal consideration was manufactured and applied as output stage of L-band power amplifier modules with 60 W output power.

关 键 词：I线步进光刻 铝镓氮/氮化镓 高电子迁移率晶体管 场板 难熔栅 

分 类 号：TN304[电子电信—物理电子学] TN386