无支撑、光学级MPCVD金刚石膜的研制  

Growth of Free-Standing Diamond Films by Microwave Plasma Chemical Vapor Deposition

作　　者：丁明清[1] 陈长青[1] 白国栋[1] 李含雁[1] 冯进军[1] 胡银富[1] 

机构地区：[1]大功率微波电真空器件技术国防科技重点实验室北京真空电子技术研究所,北京100015

出　　处：《真空科学与技术学报》2011年第6期661-665,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国防科技重点实验室基金项目

摘　　要：利用引进的6 kW微波等离子体化学气相沉积设备,进行了无支撑金刚石膜工艺的初步研究。在800~1050℃的基片温度范围内,金刚石膜都呈（111）择优取向;基片相对位置对沉积较大面积、光学级金刚石膜至关重要。制出0.25 mm厚Φ50 mm的无支撑金刚石膜。拉曼光谱和X射线衍射分析表明,合成的金刚石膜晶体结构完整,sp2含量极低;透过率测试结果说明了优良的光学性能：截止波长225 nm,光学透过率（λ≥2.5μm）≥70%。The high quality free-standing diamond films were grown by 6kw microwave plasma chemical deposition（MPCVD） on n-type Si（100） wafer substrates.The impacts of the growth conditions,including the substrate temperature and position,pressure,ratio of CH4/H2 flow rates,and microwave power,on microstructures and properties of the diamond films were characterized with X-ray diffraction（XRD）,scanning electron microscopy（SEM）,Raman spectroscopy,and conventional probes.The results show that the temperature and position of the substrate significantly affect the film growth,and that few sp2 exists.For instance,at a temperature in the range from 800℃ to 1050℃,the grain in the compact diamond films grows preferentially in（111）.The substrate position plays an important role in growth of large area,uniform,optical diamond films.Under the optimized conditions,the free-standing diamond films,with a thickness of 0.25 mm,a diameter of 50 mm,a cutoff frequency of 225 nm,and a transmittance（λ≥2.5 μm） greater than 70%,were obtained.

关 键 词：微波等离子体 化学气相沉积 无支撑金刚石膜 光学透过率 

分 类 号：TB75[一般工业技术—真空技术]