大功率4H-SiC GTO晶闸管研究  

Research on High Power 4H-SiC GTO Thyristor

作　　者：雷海峰[1] 金锐[2] 温家良[2] 刘明光[1] 

机构地区：[1]北京交通大学,北京100044 [2]中国电力科学研究院,北京100192

出　　处：《电力电子技术》2011年第12期129-132,共4页Power Electronics

基　　金：国家电网公司科技项目(ZL71-09-001)~~

摘　　要：此处主要从SiC-GTO晶闸管设计的3个因素进行了研究,包括:击穿电压设计、两个等效晶体管共基极电流放大系数设计以及少子寿命取值设计。通过ATLAS器件仿真得到器件的击穿特性、内部电场分布及正向I-V曲线。最后通过Silvaco-TCAD提供的MixedMode混合仿真组件,对设计的SiC-GTO进行了开关特性模拟,并与5SGS 16H4500对称型Si-GTO进行了比较,结果表明,所设计的大容量SiC-GTO也比当前Si-GTO具有更高的开关速度。The three design factors of SiC-GTO thyristor are studied,which including breakdown voltage,two equivalent transistors common base current gain and minority carrier lifetime value design.Through the ATLAS device simu- lator,the breakdown characteristics,internal electric field distribution and forward I-V curve are obtained.Lastly,the MixedMode components simulate the switching characteristics by Silvaco-TCAD ,and compared with 5SGS 16H4500, the results show that the design of this large-capacity SiC-GTO thyristor has fast switching speed which comparing with Si-GTO thyristor.

关 键 词：晶闸管 击穿电压 少子寿命 开关特性 

分 类 号：TN34[电子电信—物理电子学]