采用InGaAs或InAlAs缓冲层的高In组分InGaAs探测器结构材料特性(英文)  

High indium content InGaAs photodetector:with InGaAs or InAlAs graded buffer layers

作　　者：顾溢[1,2] 王凯[1,3] 李成[1,3] 方祥[1,3] 曹远迎[1,3] 张永刚[1,2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院红外成像材料与器件重点实验室,上海200083 [3]中国科学院研究生院,北京100039

出　　处：《红外与毫米波学报》2011年第6期481-485,共5页Journal of Infrared and Millimeter Waves

基　　金：Natural Science Foundation of Shanghai(10ZR1436300);Innovative Foundation of Shanghai Institute of Microsystem and Information Technology;Foundation of Key Laboratory of Infrared Imaging Materials and Detectors CAS

摘　　要：利用气态源分子束外延在InP衬底上生长了具有InxGa1-xAs或InxAl1-xAs连续递变缓冲层的高In组分In0.78Ga0.22As探测器结构.通过原子力显微镜、X射线衍射、透射电子显微镜和光致发光对它们的特性进行了表征和比较.结果表明,具有InxGa1-xAs或InxAl1-xAs缓冲层的结构都能获得较平整的表面;具有InxGa1-xAs缓冲层的探测器结构表现出更大的剩余应力;具有InxAl1-xAs缓冲层的探测器结构所观察到的光学特性更优.High indium content In0.78Ga0.22As photodetector structures have been grown on InP substrates with InxGa1-xAs or InxAl1-xAs graded buffer layers wherein x changed continuously by gas source molecular beam epitaxy.Their characteristics were investigated by atomic force microscope,x-ray diffraction,transmission electron microscopy and photoluminescence.The differences between samples with the two kinds of buffer layers were studied.Results show that moderate surface morphology can be obtained with either InxGa1-xAs or InxAl1-xAs buffer layers.Larger residual strain is present in the photodetector structure with InxGa1-xAs buffer layer.On the other hand,superior optical characteristics have been observed for the photodetector structure with InxAl1-xAs buffer layer.

关 键 词：光电探测器 高In组分 缓冲层 INGAAS INALAS 

分 类 号：TN2[电子电信—物理电子学]