大容量Flash存储器空间辐射效应试验研究  

Radiation Effect Test on Large Capacity Flash Memories

作　　者：张洪伟[1] 于庆奎[1] 张大宇[1] 孟猛[1] 唐民[1] 

机构地区：[1]中国空间技术研究院,北京100094

出　　处：《航天器工程》2011年第6期130-134,共5页Spacecraft Engineering

摘　　要：分析了商用Flash存储器应用于航天器时应考虑的空间辐射效应和机理,并利用钴-60γ射线和重离子加速器对韩国三星公司生产的大容量Flash存储器K9XXG08UXA系列进行了抗电离总剂量试验和抗单粒子试验,以评估其空间应用可行性。试验结果显示:这一系列存储器的累积电离总剂量为50krad(Si)时,器件部分数据丢失,重新配置刷新后,功能正常;在线性能量传递值小于38MeV.cm2/mg时,未发生单粒子锁定和功能中断现象。空间辐射环境采用AD-AMS 90%最坏情况模型,太阳同步轨道高度965km,存储单元单粒子翻转率计算值为2×10-2次/(天.器件)。The radiation effects and mechanism of highly scaled Flash memories applied in spacecraft are analyzed.The total ionizing dose and single event effect tests of highly scaled Flash memories K9XXG08UXA series of Samsung are carried out at the Co-60 facility and the heavy ions accelerator to evaluate the possibility of application in space.The results show that a part of data are lost at a total ionizing dose of nearly 50krad（Si） and the memories work well after resetting,and no single event latch-up and single event functional interrupt occures at linear energy transformation below 38MeV·cm2/mg.The calculated value of single event upset rate of memory unit is 2×10-2 errors/（device·day） in the condition of ADAMS of 90% worst environment and SSO altitude of 965km.

关 键 词：航天器 FLASH存储器 辐射效应 电离总剂量 单粒子效应 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]