H_2/(Ar+H_2)流量比对AZO薄膜结构及光电性能的影响  

Effect of H_2/(Ar+H_2) flux ratio on structure and optical-electrical properties of AZO thin films

作　　者：朱胜君[1] 王俊[1] 李念[1] 李涛涛[1] 吴隽[1] 祝柏林[1] 

机构地区：[1]武汉科技大学钢铁冶金及资源利用省部共建教育部重点实验室,湖北武汉430081

出　　处：《武汉科技大学学报》2012年第1期56-60,共5页Journal of Wuhan University of Science and Technology

摘　　要：在Ar+H2气氛下,用RF磁控溅射法在室温下制备Al掺杂的ZnO(AZO)薄膜,研究H2/(Ar+H2)流量比对薄膜结构和光电性能的影响。结果表明,在沉积气氛中引入H2可以提高AZO薄膜的结晶质量,降低AZO薄膜的电阻率,提高其霍尔迁移率和载流子浓度;H2/(Ar+H2)流量比为5%时,AZO薄膜的最小电阻率为1.58×10-3Ω.cm,最大霍尔迁移率和载流子浓度分别为13.17cm2.(V.s)-1和3.01×1020 cm-3;AZO薄膜在可见光范围内平均透光率大于85.7%。Al-doped ZnO thin films （AZO） were deposited in Ar＋H2 atmosphere by RF magnetron sputtering at room temperature. The effect of H2/（Ar＋H2） flux ratio on structure and optical-electrical properties of AZO films were investigated with XRD, SEM, Hall effect instrument, and UV visible spectrophotometer. The results show that H2 introduction into deposition atmosphere can im- prove the crystallite quality of the AZO films, greatly reduce the electrical resistivity and improve Hall mobility and carrier concentration of the films. When H2/（Ar＋H2） flux ratio is 5%, deposited AZO film has the minimum resistivity of 1.58×10^-3Ω·cm with Hall mobility at 13.17 cm^2 V^-1 s and carrier concentration at 3.01 × 10^20 cm^-3 , and its average transmittance in the visible light range is over 85.7%. The results suggest that AZO films deposited in Ar＋H2 atmosphere at room temperature are suitable for application in solar cells and organic light emitting diodes as transparent conductive electrode layers.

关 键 词：H2/(Ar+H2)流量比 AZO薄膜 射频磁控溅射法 结晶质量 电阻率 透光率 

分 类 号：O484.4[理学—固体物理]