SOI CMOS SRAM单元单粒子翻转效应的模拟  

Circuit simulation of SEU for SOI CMOS SRAM cells

作　　者：李振涛[1] 于芳[1,2] 刘忠立[1,2] 赵凯[1,2] 高见头[1,2] 杨波[1,2] 李宁[1,2] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]传感器技术国家重点实验室,北京100190

出　　处：《信息与电子工程》2011年第6期774-777,共4页information and electronic engineering

摘　　要：为简单快速模拟静态随机存储器(SRAM)的单粒子效应,在二维器件数值模拟的基础上,以经典的双指数模型为原型,通过数值拟合得到了单粒子效应瞬态电流脉冲的表达式,考虑晶体管偏压对瞬态电流的影响,得到修正的瞬态电流表达式,将其带入电路模拟软件HSPICE中进行SRAM存储单元单粒子翻转效应的电路模拟,通过与实际单粒子实验结果的对比,验证了这种模拟方法的实用性。For the purpose of simulating the Single Event Upset（.SEU） of a Static Random Access Memory（SRAM） cell fast and simply, a classical double exponential expression of a transient current pulse in a single event effect is confirmed by numerical optimization of results from 2-D device numerical simulation. An amended equation that gives the relationship between transistor bias voltage and transient current is derived by theoretical analysis. This equation can be used to simulate the SEU of a SRAM cell in the circuit simulation tool HSPICE. Finally, the practicability of this method is verified by the comparison with the result of SEU experiment

关 键 词：单粒子翻转 双指数模型 器件模拟 部分耗尽绝缘体上硅 静态随机存储器 

分 类 号：TN386[电子电信—物理电子学] TP333.8[自动化与计算机技术—计算机系统结构]