长波InAsSb材料的结构特性研究  

Studies on Structural of Long Wavelength Infrared InAsSb Materials

作　　者：杜传兴[1] 高玉竹[1] 龚秀英[1] 方维政[2] 

机构地区：[1]同济大学电子与信息工程学院,上海201804 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《电子与封装》2012年第1期14-16,24,共4页Electronics & Packaging

摘　　要：用熔体外延(ME)法在InAs衬底上生长了InAsSb外延层,用扫描电子显微镜(SEM)观察了样品的横截面,并测量出外延层的厚度达到100μm,用X-射线衍射(XRD)谱研究了InAsSb外延层的结构性质。测量结果表明,InAs/InAs0.023Sb0.977单晶具有相当完美的晶体取向结构及良好的结晶质量,这可能得益于100μm的外延层厚度基本消除了外延层与衬底之间晶格失配的影响。电子探针微分析(EPMA)测量的元素分布图像显示,Sb(锑)元素在外延层中的分布相当均匀。The InAsSb epilayers were successfully grown cross section of an InAsSb sample was observed by SEM, on InAs substrate using melt epitaxy （ME） . The and the result showed that the thickness of InAsSb epilayer reaches 100μm. The structural property of InAsSb epilayer were researched by X-ray diffraction （XRD） spectra. The results demonstrates that the InAs/InAso.023Sbo.977 epilayer have fairly perfect crystal orientation structure, and the results indicate the high quality of InAsSb epilayers. All this may benefited from the influence of lattice mismatch between the InAsSb epilayer and the InAs substrate were almostly eliminated because of the thickness of InAsSb epilayers reaches 100μm. A figure of distribution tendency of compositions measured by an electroprobe microanalyzer （EPMA） observes that the distribution of Sb in InAsSb epilayer is fairly homogeneous.

关 键 词：INASSB 熔体外延 结构性质 组分分布 

分 类 号：TN304[电子电信—物理电子学]