22nm技术节点异质栅MOSFET的特性研究  

Research on Characteristics of Dual-Material Gate MOSFET in 22nm Technology Node

作　　者：杨颖琳[1] 胡成[1] 朱伦[1] 许鹏[1] 朱志炜[1] 张卫[1] 吴东平[1] 

机构地区：[1]复旦大学微电子学系专用集成电路与系统国家重点实验室,上海200433

出　　处：《半导体技术》2012年第3期184-187,共4页Semiconductor Technology

基　　金：国家科技重大专项(2009ZX02305-003);上海高校特聘教授(东方学者)岗位计划资助项目

摘　　要：研究了22 nm栅长的异质栅MOSFET的特性,利用工艺与器件仿真软件Silvaco,模拟了异质栅MOSFET的阈值电压、亚阈值特性、沟道表面电场及表面势等特性,并与传统的同质栅MOSFET进行比较。分析结果表明,由于异质栅MOSFET的栅极由两种不同功函数的材料组成,因而在两种材料界面附近的表面沟道中增加了一个电场峰值,相应地漏端电场比同质栅MOSFET有所降低,所以在提高沟道载流子输运效率的同时也降低了小尺寸器件的热载流子效应。此外,由于该器件靠近源极的区域对于漏压的变化具有屏蔽作用,从而有效抑制了小尺寸器件的沟道长度调制效应,但是由于其亚阈值特性与同质栅MOSFET相比较差,导致漏致势垒降低效应(DIBL)没有明显改善。The characteristics of dual-material gate （DMG） MOSFET with 22 nm gate length via two dimensional simulation were studied. The characteristics such as the threshold voltage, subthreshold slope, channel electric field and surface potential of DMG MOSFET were simulated by using Silvaco software. And compared with the conventional single-material gate （SMG） MOSFET. The gate of the DMG MOSFET is composed of two different conductor materials which have different work- functions. So the DMG MOSFET have exhibited a peak electric field in the channel in the vicinity of the interface of the two different gate materials and lower electric field at drain region. Consequently, the efficiency of carrier transport is improved, and hot carrier effect is reduced for dual-material gate （DMG） MOSFET. Moreover, the region near the source is screened from drain voltage variations, hence the effect of channel length modulation is suppressed. However, no clear improvement of draininduced barrier lowering （DIBL） effect is observed, which is very likely attributed to the worse subthreshold slope for DMG MOSFET.

关 键 词：异质栅 金属氧化物半导体场效应晶体管 热载流子效应 表面电场 表面势 漏致势垒降低效应 

分 类 号：TN386[电子电信—物理电子学]