砷化镓基毫米波MEMS开关表面工艺研究  

The Study of GaAs Based Surface Process of Millimeter Wave MEMS Switch

作　　者：姜理利[1] 贾世星[1] 冯欧[1] 朱健[1,2] 

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2012年第1期78-82,共5页Research & Progress of SSE

摘　　要：研究了砷化镓基毫米波MEMS开关的表面工艺方法,包括MEMS开关的工艺流程中的牺牲层技术、结构层技术、触点技术、薄膜电阻技术。重点阐述了以光敏聚酰亚胺作牺牲层和以电镀金作结构层的工艺制作方法。形成了砷化镓RF MEMS开关表面工艺流程,制作出了RF MEMS开关样品。开关驱动电压为60 V,35 GHz时的插入损耗<0.2 dB,隔离度>18 dB。This paper studys the GaAs based low temperature surface process of millimeter wave MEMS switch which includes the sacrificial process, structure layer process, contact dimple process and the thin film resistance process of RF MEMS switch. The process of photosensitive PI sacrificial layer and the electrolpated gold sturcture layer are discussed in detail. The process flow for GaAs based millimeter wave MEMS switch is obtained, and the RF MEMS switch samples are made. The pull in voltage of the switch is 60 V, the insertion loss is less than 0. 2 dB, and the isolation is better than 18 dB.

关 键 词：射频微机电系统开关 低温表面工艺 牺牲层技术 结构层技术 

分 类 号：TN385[电子电信—物理电子学]