RF MEMS开关封装的通孔工艺研究  

Research of Via Process in RF MEMS Switch Packaging

作　　者：江钧[1] 朱健[1,2] 贾世星[1] 

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2012年第1期83-87,共5页Research & Progress of SSE

摘　　要：将喷胶技术应用到金属互联工艺中,此方法可以用于器件的封装。具体工艺步骤如下:在衬底与硅帽键合结束后在底部湿法刻蚀孔200μm。在孔中利用PECVD生长SiO2,优化喷胶工艺在盲孔底部进行光刻,RIE除去SiO2后电镀金与衬底正面器件实现金属互联,传输线从衬底底部引出。针对整个流程中关键的步骤,进行20μm深孔光刻实验,结果证实能在深孔中光刻图形。Spray technology is applied to metal interconnects process in devices packaging in this paper. The process is detailed as follows： via, 200μm, was formed by wet etching after the substrate had been bonded with silicon cap. SiOz was deposited by PECVD in via. Optimization of spray process was carried out in the bottom of via. Au was electroplated to connect with device on the substrate after removing SiO2 with RIE. The transmission line was led from the bottom of the substrate. For the critical step in this process, we conducted an experiment of deep hole （200 μm） photolithography, the results proved that the patterns could be fermed in the deep hole.

关 键 词：射频微机电系统开关 圆片级封装 喷胶工艺 

分 类 号：TN385[电子电信—物理电子学]