抗辐射数字电路加固技术研究  

Study of the Radiation-hard Ability of Digital Circuits

作　　者：徐大为[1] 徐静[1] 肖志强[1] 高向东[1] 洪根深[1] 陈玉蓉[1] 周淼[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2012年第2期37-39,48,共4页Electronics & Packaging

摘　　要：文章对电路抗辐射的机理进行了研究,提出了几种提高数字电路抗辐射能力的方法:通过工艺控制减小辐射后的背栅阈值电压漂移,通过版图增加体接触、采用环型栅等结构提高单元的抗辐射能力,通过对电路关键节点的加固提高整体电路的抗辐射能力。为了验证加固方法的可靠性,设计了一款电路进行抗总剂量、抗瞬态剂量率、抗中子辐射、抗单粒子辐射等多种试验。通过辐照试验结果可以看到,采用抗辐照方法设计的电路具有较强的抗辐照能力,为今后抗辐照电路的研制和开发奠定了坚实的基础。In this paper, we studied the mechanism of radiation and offered several optimization methods to improve the radiation-hard ability of digital circuits. According to the research, we decrease threshold voltage excursion by process control, improve the radiation-hard ability by adding body-contact and using roundgate, improve the radiation-hard ability of the key-point. This paper design a digital circuit to validate the radiation-hard method by total dose radiation experiment, trans-radiation experiment, neutron experiment and SEU experiment. According to the experiment results, the radiation-hard ability of the circuit is improved.

关 键 词：抗辐射 SOI 总剂量 

分 类 号：TN306[电子电信—物理电子学]