低导通电阻沟槽栅极LIGBT的模拟研究  

Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance

作　　者：李婷[1] 王颖[1] 陈宇贤[1] 高松松 程超[1] 

机构地区：[1]哈尔滨工程大学信息与通信工程学院,黑龙江哈尔滨150001

出　　处：《哈尔滨理工大学学报》2012年第1期78-81,共4页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(60906048);黑龙江省青年科学基金(QC2009C66)

摘　　要：横向绝缘栅双极晶体管(LIGBT)采用少数载流子的注入来降低导通电阻,完成了5μm外延层上普通LIGBT(C-LIGBT)、3μm外延层上的Trench Gate LIGBT(TG-LIGBT)设计及仿真.研究了利用沟槽结构改善LIGBT的正向特性和利用RESURF技术改善TG-LIGBT的反向特性.通过Silvaco TCAD软件验证了了击穿电压大于500 V的两种结构LIGBT设计,实现了导通压降为1.0 V,薄外延层上小元胞尺寸,且有低导通电阻、大饱和电流的TG-LIGBT器件.LIGBT has the advantage of very low on-resistance because of minority carriers injection. The optimization and simulation of this article is completed within two structures： 5 μm conventional LIGBT（C-LIGBT） and 3 μm Trench Gate LIGBT （TG-LIGBT） with epitaxial layer. The purpose of this thesis is to improve on-state performanee based on trench gate and off-state performance through RESURF. Two over 500 V breakdown voltage LIGBT are investigated under the Silvaco TCAD software. A lower on-state resistance TG-LIGBT has been realized in cell-size thin epitaxial layer under 1.0 V of forward voltage. Moreover, TG-LIGBT exploits the structure of trench electrode to decrease chip size in forward voltage circumstance.

关 键 词：LIGBT 沟槽 击穿电压 导通电阻 导通压降 

分 类 号：TN387.5[电子电信—物理电子学]