AlGaN基p-i-n型日盲紫外探测器材料的研制  

Research on Materials of AlGaN Based p-i-n Solar-Blind Ultraviolet Detectors

作　　者：刘波[1] 袁凤坡[1] 尹甲运[1] 盛百城[1] 房玉龙[1] 冯志红[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2012年第4期284-287,298,共5页Semiconductor Technology

摘　　要：采用金属有机气相外延(MOCVD)方法在(0001)面蓝宝石衬底上生长了AlN和高铝组分AlGaN材料。通过优化AlN和AlGaN材料的生长温度、生长压力和Ⅴ族元素/Ⅲ族元素物质的量比(nⅤ/Ⅲ)等工艺条件,得到了高质量的AlN和高铝组分AlGaN材料。AlN材料X射线双晶衍射ω(002)半宽为74 arcsec,透射光谱测试带边峰位于205 nm,带边陡峭;Al组分为45%的AlGaN材料X射线双晶衍射ω(002)半宽为223 arcsec,透射光谱测试带边峰位于272 nm,带边陡峭。采用此外延工艺方法生长了AlGaN基p-i-n型日盲紫外探测器材料并进行了器件工艺流片,研制出AlGaN基p-i-n型日盲紫外探测器,响应峰值波长为262 nm,在零偏压下的峰值响应度达到0.117 A/W。AlN and high A1 content A1GaN were grown on （0001） sapphire substrates by MOCVD. By optimizing the process parameters such as temperature, pressure, V/Ⅲ ratio of A1N and A1GaN, the high quality A1N and A1GaN materials were obtained. X-ray w （002） full width half maximum （FWHM） of A1N is 74 arcsec, the band edge of transmission spectrum is 205 nm and very sharp. X-ray w （002） FWHM of A10.45GaN is 223 arcsec, the band edge of transmission spectrum is 272 nm and very sharp. The material for AlGaN based p-i-n solar-blind UV detector was grown by optimized processing, and the devices were fabricated. AlGaN based p-i-n solar-blind ultraviolet detectors were fabricated, the peak responsivity wavelength is 262 nm, and peak responsivity at zero bias voltage is 0. 117 A/W.

关 键 词：金属有机气相沉积 蓝宝石衬底 氮化铝 铝镓氮 日盲紫外探测器 

分 类 号：TN304.2[电子电信—物理电子学]