InSb阳极氧化膜界面特性研究  

Interface Properties of Anodized InSb

作　　者：余黎静[1] 李延东[1] 信思树[1] 郭雨航[1] 杨文运[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2012年第4期191-195,共5页Infrared Technology

摘　　要：用阳极氧化的方法在InSb衬底上生长氧化膜,并在阳极氧化膜上镀Cr/Au电极以制备MOS器件,通过分析77 K时MOS器件C-V特性,得出InSb-阳极氧化膜界面的掺杂浓度、界面态密度,氧化层中的固定电荷密度可动电荷密度等重要参数,分析其界面特性和制备工艺的关系,为InSb表面的钝化工艺提供参考。Anodic oxide has been grown on InSb substrate,then the MOS device was fabricated after a layer of Cr/Au gate electrode was evaporated on the oxide.By measuring the capacitance-voltage characteristic at 77K,The electrical properties of the interface,such as impurity concentration,interface state density,fixed charges density mobile ions density has been studied.The conclusions indicate that the properties of the MOS structures are strongly affected by the fabrication procedures,which can provide reference for surface passivation technology.

关 键 词：阳极氧化 MIS器件 C-V特性 界面态密度 

分 类 号：TN213[电子电信—物理电子学]