等离子刻蚀铝硅铜表面质量控制技术研究  

Investigation into Surface Quality Control for Plasma Etched AlSiCu

作　　者：王大平[1] 唐昭焕[2] 梁涛[1] 朱煜开[1] 王斌[1] 谭开洲[2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2012年第2期277-280,共4页Microelectronics

基　　金：国家重大基础研究基金资助项目(Y61398)

摘　　要：针对等离子刻蚀AlSiCu表面质量差、易被腐蚀、铜残留等问题,对采用等离子刻蚀的圆片进行烘焙以及使用混合溶液对圆片进行处理等方式,解决了AlSiCu腐蚀、铜残留以及表面发雾等圆片表面质量问题,得到了优化的AlSiCu刻蚀表面质量控制条件。使用优化刻蚀工艺条件,极大地提升了用AlSiCu作金属互连的模拟IC的表面镜检合格率,为其他金属互连的表面质量控制提供了参考。Aiming at the poor quality of plasma-etched AlSiCu surface and problems of erosion and copper residue,baking and cleaning with mixed solution were carried out on plasma etched wafers.By using these methods,problems of surface quality,such as erosion of AlSiCu,copper leftover and misty surface,were solved,and optimized conditions to control surface quality was obtained.By using the optimized process,pass rate of surface quality inspection on ICs with AlSiCu was significantly improved.The proposed method could provide a reference for surface quality control of other metal interconnects.

关 键 词：等离子体刻蚀 铝硅铜 金属互连 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]