Al_xGa_(0.51-x)In_(0.49)P光学性质的研究  

Study on Optical Properties of Al_xGa_(0.51-x)In_(0.49) P

作　　者：连洁[1] 张淑芝[1] 卢菲[1] 魏爱俭[1] 黄伯标[2] 崔德良[2] 秦晓燕[2] 王海涛[3] 

机构地区：[1]山东大学光电系,济南250100 [2]山东大学晶体材料所,济南250100 [3]山东大学环境工程系,济南250100

出　　处：《半导体光电》2000年第2期111-114,共4页Semiconductor Optoelectronics

基　　金："8 6 3"资助项目!(86 3- 715 - 0 0 1- 0 171)

摘　　要：用MOCVD方法在GaAs衬底上生长了AlGaInP的本征及掺Si或掺Mg三个样品。用椭偏光谱法测量了样品在室温下可见光区的光学常数 ,并求其介电函数的三级微商谱。用三点比例内插法分析介电函数的三级微商谱 ,精确地得到样品的带隙Eg、Eg+Δ0 以及Eg 以上成对结构跃迁的能量位置 ,并对其结果加以分析。同时与沟道分析等方法相结合对材料的性能进行了鉴定。An Al x Ga 0.51- x In 0.49 P intrinsic sample and other two samples doped with Si or Mg are prepared by MOCVD on GaAs substrates.Optical constants in the visible light region at room temperature are measured by using ellipsometric spectroscopy, and the third derivative spectrum of the dielectric functions are evaluated. By means of three-point-scaling,the third derivative spectrum of the dielectric functions can be calculated. Thereby, the accurate E g, E g+ Δ 0 and the energy position of transition for the paired structure above E g are obtained. The results are discussed. The performance of samples is identified by present work combined with channeling analysis and other methods.

关 键 词：ALGAINP 光学性质 砷化镓 光学性质 MOCVD 

分 类 号：TN304.23[电子电信—物理电子学]