直流磁控溅射法低温制备GZO:Ti薄膜及其光电性能研究  

Growth and Characterization of DC Magnetron Sputtered GZO:Ti Films

作　　者：郭美霞[1] 李洁[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《真空科学与技术学报》2012年第4期324-327,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：用直流磁控溅射法在玻璃衬底上成功制备出了钛镓共掺杂氧化锌(GZO:Ti)透明导电薄膜,研究了溅射压强和功率对GZO:Ti薄膜的微观结构和光电性能的影响。研究结果表明,所制备的GZO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。溅射压强和功率对薄膜的电阻率和微观结构均有显著影响。随功率增大,薄膜电阻率降低,生长率增大。所制备的薄膜的最小电阻率为1.81×10-4Ω·cm,可见光区平均透过率大于84%。The Ga-Ti co-doped zinc oxide（GZO∶Ti） films were deposited by DC magnetron sputtering on glass substrates.The impacts of the growth conditions on microstructures and properties were evaluated.The GZO∶Ti films were characterized with X-ray diffraction,scanning electron microscopy and conventional probes.The results show that the sputtering power and pressure strongly affect the microstructures and resistivity of the hexagonal wurtzite-phased polycrystalline films with a preferential orientation in c-axis.For example,as the sputtering power and deposition rate increased,its resistivity decreased.The lowest resistivity of the GZO∶Ti film,grown under the optimized conditions,was found to be 1.81×10-4 Ω·cm,with an average transmittance of above 84% in the visible range.

关 键 词：GZO:Ti薄膜 透明导电薄膜 溅射压强 溅射功率 磁控溅射 

分 类 号：O484[理学—固体物理]