应用于LOCOS隔离工艺的平坦化技术研究  

Research on the Technology of Planarization for LOCOS Process

作　　者：高渊[1,2] 刘英坤[2] 邓建国[2] 梁东升[2] 董军平[2] 

机构地区：[1]河北工业大学信息工程学院,天津300310 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第6期460-463,共4页Semiconductor Technology

摘　　要：介绍了LOCOS隔离技术的原理,研究了应用于LOCOS工艺的反刻平坦化技术,通过调整刻蚀中反应气体流量等工艺参数,在CHF3流量50 mL/min、O2流量2 mL/min条件下,获得了较好的平坦化表面。研究了应用于LOCOS工艺的CMP平坦化技术,通过调整CMP压力、转速、流量等工艺参数,控制了抛光速率和精度,提高平坦化的均匀性,在工艺条件为压力1psi(1 psi=6.89×103 Pa),转速25 r/min,流量120 mL/min时,获得了良好的平坦化形貌。通过实验对比发现,CMP平坦化效果优于反刻平坦化,适合于实际生产应用。The mechanism of LOCOS process was introduced, and the technology of etch-back for LOCOS was researched. Smooth surface was obtained by adjusting the gas flow rate. The flow rate of CHF3 was 50 mL/min, and the flow rate of 02 was 2 mL/min. The CMP technology for LOCOS process was studied. Polishing rate and precision were controlled by optimizing the parameters of pressure, rotation and slurry, etc. The coherence of planarization is improved and good surface state is attained under the condition that the pressure is 1 psi, the rotation is 25 r/min, and the slurry is 120 mL/min. Compared with the etch-back, the effect of CMP is better. The CMP technology is applied for the production.

关 键 词：局部氧化隔离 化学机械抛光 反刻 抛光速率 选择比 

分 类 号：TN405[电子电信—微电子学与固体电子学]