高速SOI-LIGBT的数值分析  

Numerical Analysis of High Speed SOI-LIGBT

作　　者：杨健[1] 方健[1] 李肇基[1] 

机构地区：[1]电子科技大学微电子所,成都610054

出　　处：《电子科技大学学报》2000年第2期153-157,共5页Journal of University of Electronic Science and Technology of China

基　　金：国家"九五"预研基金资助;国防基金资助

摘　　要：研制出Ｈｅ离子注入局域寿命控制ＳＯＩ横向绝缘栅双极晶体管（ＳＯＩ－ＬＩＧＢＴ），有效地提高了器件的关断速度，且与集成电路工艺相兼容。数值模拟表明，该器件的t_f～V_F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低０．６～１．４ Ｖ，避免了阳极短路结构的正向快速返回现象。He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process. It is demonstrated by numerical simulation that the trade- off is superior to the devices using unlocalized lifetime control, the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed, and it can avoid the snap-back phenomena of anode-short structure.

关 键 词：横向绝缘栅 双极晶体管 SOI 离子注入 数值分析 

分 类 号：TN322.8[电子电信—物理电子学]