大面积金刚石膜生长环境气氛的计算机模拟  

Numerical Model for Large Area Diamond Film Deposition by DC Arc Plasma Jet Method

作　　者：黄天斌[1] 唐伟忠[1] 吕反修[1] 张维敬[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《北京科技大学学报》2000年第2期156-159,共4页Journal of University of Science and Technology Beijing

基　　金：国家"863"高科技资助!71-002-Z030

摘　　要：建立了直流电弧等离子体喷射ＣＶＤ大面积金刚石沉积数学模型．对衬底上方等离子 体中的化学环境进行了模拟计算，并与在相同条件下对等离子体的光谱结果进行对比，发现计 算结果与实验结果基本上吻合．在模拟条件下ＣＨ基团可能是促使金刚石生长的主要活化基 因．模拟结果显示ＣＨ基因沿径向的均匀分布对大面积金刚石膜生长有较大的意义．Numerical model for large area diamond film deposition by DC Arc Plasma Jet CVD method is proposed. Chemical environment over the substrate surface during diamond growth were calculated, and was compared with experiment data from optical emission spectrum obtained at similar conditions. It was found that the CH radical may be main active precursor responsible for diamond growth. The overall uniform distribution of CH radical is important for large area deposition of diamond films.

关 键 词：大面积金刚石膜 生长 气氛 CVD 计算机模拟 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]