原子层淀积技术应用于太阳电池的研究进展  

Progresses on Applications of Atomic Layer Deposition in Solar Cells

作　　者：谢章熠[1] 谢立恒[1] 耿阳[1] 孙清清[1] 周鹏[1] 卢红亮[1] 张卫[1] 

机构地区：[1]复旦大学微电子学系ASIC与系统国家重点实验室,上海200433

出　　处：《半导体光电》2012年第3期307-313,360,共8页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51102048);复旦大学自主创新科研项目;复旦大学人才引进启动资金项目;ASIC与系统国家重点实验室面上项目(11MS017)

摘　　要：原子层淀积(ALD)是一种先进的纳米级薄膜生长技术,在微电子和光电子领域有着广泛的应用前景,尤其在提高太阳电池的光电转换效率方面正发挥越来越大的作用,很可能成为下一代太阳电池工艺中的重要方法。文章综述了近年来ALD技术在太阳电池领域的应用研究进展,详细介绍了ALD技术应用在不同类型太阳电池的最新研究成果和存在的问题,并对其发展趋势进行了展望。Atomic layer deposition （ALD） emerged as an important and advanced method for preparing nanoscale thin films for microelectronics and optoelectronics applications. ALD is more and more important in improving the efficiency of photovoltaic. It is probably becoming the most significant process method for the next generation of solar cells. Research progresses on applications of atomic layer deposition in solar cells are reviewed in this article. New research results and existing problems of ALD technology used in various types of solar cells are introduced in detail, and the development trends are prospected.

关 键 词：太阳电池 原子层淀积 薄膜生长 

分 类 号：TM914.4[电气工程—电力电子与电力传动]