HVPE生长厚层GaN基片V/Ⅲ对结晶质量的影响  

Analysis of the Thick GaN Crystal Qualities underDifferent V/Ⅲ Ratio Grown by HVPE

作　　者：杨丹丹[1] 徐永宽[1] 程红娟[1] 张嵩[1] 李晖[1] 徐所成[1] 史月增[1] 刘金鑫[1] 岳洋[1] 张峰[1] 郝建民[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《固体电子学研究与进展》2012年第3期215-218,共4页Research & Progress of SSE

摘　　要：采用HVPE法,通过改变V/Ⅲ生长厚层GaN基片。分别采用X射线双晶衍射摇摆曲线、拉曼光谱及扫描探针显微镜进行生长晶体结晶质量和显微形貌分析。生长出表面光亮、无坑、无裂痕的60μm以上厚层GaN基片,并简要介绍厚层GaN基片生长过程中V/Ⅲ影响成核岛演变的规律。This paper describes the thick GaN films grown by HVPE based on V/Ⅲ ratio. Double-crystal X-ray diffraction rocking curve FWHM measurement the different and Raman spectra and microscopic morphology analysis reveal the V/Ⅲ ratio of thick GaN film growth pro-cess to affect the nucleation island evolution. Thick GaN films of 60 μm with brightly surface and crack-free are grown by hydride vapor phase epitaxy.

关 键 词：氢化物 气相外延 氮化镓 X射线双晶衍射 拉曼光谱 V/Ⅲ 

分 类 号：TN304.054[电子电信—物理电子学]