3～6GHz SiGe HBT Cascode低噪声放大器的设计  

Design of 3-6 GHz SiGe HBT Cascode Low Noise Amplifier

作　　者：丁春宝[1] 张万荣 谢红云[1] 沈珮[1] 陈亮[1] 尤云霞[1] 孙博韬[1] 王任卿[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《北京工业大学学报》2012年第8期1162-1166,共5页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(60776051);北京市自然科学基金资助项目(4122014)

摘　　要：基于Jazz 0.35μm SiGe工艺设计一款满足UWB和IEEE802.11a标准的低噪声放大器.采用并联电感峰化技术与Cascode结构来展宽带宽;完成了芯片版图的设计,芯片面积为1.16 mm×0.78 mm;在带宽为3～6 GHz范围内,最大增益为26.9 dB,增益平坦度为±0.9 dB.放大器的输入输出匹配良好,其回波损耗S11和S22均小于-10dB,输入与输出驻波比小于1.5,1 dB压缩点为-22.9 dBm.在整个频段内,放大器无条件稳定.Based on Jazz 0.35 μm SiGe process, a SiGe HBT low-noise amplifier （LNA） for UWB and IEEE 802. l la application is presented. The technology of inductive shunt peaking and cascade configuration is adopted to enhance the bandwidth. Finally, the chip layout is designed with its area 1.16 × 0.78 mm2. For the range of 3 - 6 GHz bandwidth, the maximum power gain is 26.9 dB, and gain flatness is -＋0.9 dB. The input and output match well, input and output reflections （S11 and S22） are both less than -10 dB, the input VSWR and output VSWR are both less than 1.5, and the 1 dB compression point is -22.9 dBm. The LNA is unconditionally stable in the whole band.

关 键 词：低噪声放大器 SIGE异质结双极晶体管 达林顿对 

分 类 号：TN722.3[电子电信—电路与系统]