SOI抗总剂量辐射加固工艺栅氧可靠性研究  

Study of Radiation Hardened SOI Gate Oxide Reliability

作　　者：高向东[1] 吴建伟 刘国柱[1] 周淼[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2012年第8期44-48,共5页Electronics & Packaging

摘　　要：文章对采用了埋层二氧化硅抗总剂量加固工艺技术的SOI器件栅氧可靠性进行研究,比较了干法氧化和湿法氧化工艺的栅氧击穿电荷,干法氧化的栅氧质量劣于湿法氧化。采用更敏感的12.5nm干法氧化栅氧工艺条件,对比采用抗总剂量辐射加固工艺前后的栅氧可靠性。抗总剂量辐射加固工艺降低了栅氧的击穿电压和击穿时间。最后通过恒压法表征加固工艺的栅氧介质随时间击穿(TDDB)的可靠性,结果显示抗总剂量辐射加固工艺的12.5nm栅氧在常温5.5V工作电压下TDDB寿命远大于10年,满足SOI抗总剂量辐射加固工艺对栅氧可靠性的需求。This paper focused on the radiation-hardened SO1 technology gate oxide reliability. We compared the gate oxide QBD grown in dry O2 and wet O2, It shows that the gate oxide QBD grown in dry O2 is less than wet O2. We used dry gate oxide with 12.5nm thickness to compare the gate oxide reliability with or without radiation-hard technology, because it is more sensitive. The results show that radiation-hard process decreased gate oxide breakdown voltage and time-to-breakdown.The constant-voltage stressing test was applied to estimate time-dependent dielectric breakdown（TDDB） life of gate oxide with radiation-hard process, the life of 12.5nm gate oxide with radiation-hard process is above 10 years under normal temperature and 5.5V work conditions. It can meet the requirement in the SOI radiation-hard technology.

关 键 词：SOI 抗总剂量辐射加固 栅氧 可靠性 QBD TBD VBD TDDB 

分 类 号：TN306[电子电信—物理电子学]