国产星用VDMOS器件总剂量辐射损伤效应研究  

Research on the total dose effects for domestic VDMOS devices used in satellite

作　　者：高博[1] 刘刚[1] 王立新[1] 韩郑生[1] 张彦飞[1] 王春林[1] 温景超[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《物理学报》2012年第17期403-409,共7页Acta Physica Sinica

摘　　要：研究了两种国产星用VDMOS器件在不同偏置条件下的总剂量辐射损伤效应,探讨了器件的阈值电压、击穿电压、导通电阻、漏电流等电参数随累积剂量、退火时间的变化关系.实验结果表明这两种国产星用VDMOS器件辐照后电参数符合技术指标,满足在复杂空间电离辐射环境下工作的要求.此外,通过对器件在不同偏置条件下的总剂量辐射损伤效应进行研究,对其他型号星用VDMOS器件工艺和设计的进一步改进,具有参考作用.Total dose effects of domestic VDMOS devices used in satellite under different bias conditions are investigated. The dependences of the typical electrical parameters such as threshold voltage, breakdown voltage, on-state resistance, and leakage current on total dose are discussed. The experimental results show that the electrical parameters of the irradiated domestic VDMOS devices fulfill the design requirements. These devices also meet the work demand in a complex ionizing total dose irradiation environment. In addition, our experimental results are meaningful and important for further improving the design and the process of the others types of domestic radiation hardened VDMOS devices.

关 键 词：VDMOS 总剂量 辐射效应 退火 

分 类 号：TN386[电子电信—物理电子学]