采用水基原子层沉积工艺在石墨烯上沉积Al_2O_3介质薄膜研究  

Studies on H_2O-based Atomic Layer Deposition of Al_2O_3 Dielectric on Pristine Graphene

作　　者：张有为[1,2] 万里[1] 程新红[2] 王中健[2] 夏超[2] 曹铎[2] 贾婷婷[2] 俞跃辉[2] 

机构地区：[1]温州大学物理与电子信息工程学院,温州325035 [2]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050

出　　处：《无机材料学报》2012年第9期956-960,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(60807002;11175229)~~

摘　　要：采用水基原子层沉积(H2O-based ALD)方法在石墨烯上直接生长Al2O3介质薄膜,研究了Al2O3成核机理.原子力显微镜(AFM)对Al2O3薄膜微观形态分析表明,沉积温度决定着Al2O3在石墨烯表面的成核生长情况,物理吸附在石墨烯表面的水分子是Al2O3成核的关键,物理吸附水分子的均匀性直接影响Al2O3薄膜的均匀性.在适当的温度窗口(100～130℃),Al2O3可以均匀沉积在石墨烯上,AFM测得Al2O3薄膜表面均方根粗糙度(RMS)为0.26 nm,X射线光电子能谱(XPS)表面分析与元素深度剖析表明,120℃下在石墨烯表面沉积的Al2O3薄膜中O和Al元素的含量比约为1.5.拉曼光谱分析表明,采用H2O-based ALD工艺沉积栅介质薄膜不会降低石墨烯晶体质量.A12O3 films were deposited directly onto the surface of graphene by H2O-based atomic layer deposition （ALD） method, where physically absorbed water molecules acted as oxidant and the growing temperature changed from 60℃ to 260℃. The morphology of A12O3 films was characterized by atomic force microscope （AFM）. AFM images revealed that the distribution of physically adsorbed H20 molecules on the surface of graphene decided the morphology of A12O3 film, and conformal and uniform A12O3 film was achieved with the root mean square （RMS） roughness of 0.26 nm when the growing temperature was around 100-130℃. X-ray photoelectron spectroscopy （XPS） analysis showed that the O/AI ratio was close to stoichiometric condition of 1.5. Raman spectroscopy analy- sis revealed that H2O-based ALD process did not destroy the structure of graphene. The growing temperature in the H2O-based ALD process had significant impact on the initial nucleation and the growth of A12O3 films

关 键 词：石墨烯 原子层沉积 AL2O3薄膜 

分 类 号：O484[理学—固体物理]