关于硅薄膜液相外延中氧化问题的若干讨论  

Discussion of Oxidation in Silicon Film Grown by LPE Method

作　　者：史伟民[1] 闵嘉华[1] 王林军[1] 钱永彪[1] 刘冬华 陈培峰 桑文斌[1] 吴汶海[1] 

机构地区：[1]上海大学材料科学与工程学院,上海201800

出　　处：《上海大学学报（自然科学版）》2000年第3期194-198,共5页Journal of Shanghai University:Natural Science Edition

摘　　要：从热力学角度对 L PE中同时存在的 Si氧化与 Si O2 腐蚀的动态平衡过程进行了分析 ,表明在 Si的低温同质液相外延中 ,一般的 L PE条件很难解决防止 Si的氧化问题 .作者尝试采用饱和 Sn源保护 Si衬底的方法来解决硅氧化问题 ,通过对外延层表面形貌和成分的分析研究 ,表明采用 Sn源保护成功地解决了硅的氧化问题 .Thermodynamic analysis of dynamic equilibrium between oxidation of silicon and etching of SiO 2 existing simultaneously in LPE, indicated that it would be very difficult to prevent the oxidation of Si by traditional LPE method. By a novel method, which used saturated Sn solution to protect Si substrate, the oxidation of Si was successfully prevented, which was shown from crystallinities and compositions of Si epitaxy layers.

关 键 词：硅氧化 液相外延 硅薄膜 LPE CVD 表面形貌 

分 类 号：TN304.12[电子电信—物理电子学]