溅射气压对直流磁控溅射ZnO：Al薄膜的影响(英文)  

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

作　　者：孙可为[1] 周万城[1] 黄珊珊[1] 唐秀凤[1] 

机构地区：[1]西北工业大学材料科学与工程学院,凝固技术国家重点实验室,西安710072

出　　处：《无机材料学报》2012年第10期1112-1116,共5页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(51072165)

摘　　要：采用直流磁控溅射法在玻璃基片上沉积ZnO:Al(AZO)薄膜,溅射气压为0.2～2.2 Pa.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针和紫外–可见分光光度计对AZO薄膜的相结构、微观形貌和电光学性质进行了表征.结果表明:薄膜的沉积速率随着溅射气压的增大而减小,变化曲线符合Keller-Simmons模型;薄膜均为六角纤锌矿结构,但择优取向随着溅射气压发生改变;溅射气压对薄膜的表面形貌有显著影响;当溅射气压为1.4 Pa时,薄膜有最低的电阻率(8.4×104 Ω·cm),高的透过率和最高的品质因子Q.Al-doped ZnO（AZO） films were deposited on the glass substrates by direct current magnetron sputtering using different sputtering pressures ranging from 0.2 Pa to 2.2 Pa.Microstructure,phase,electrical and optical propertiesof AZO films were characterized by X-ray diffraction（XRD）,scanning electron microscope（SEM）,four-pointprobe and UV-Vis spectrophotometer,respectively.The results revealed that the deposition rate decreased with the increasingsputtering pressure according to Keller-Simmons model;the crystalline phase of all films was hexagonal wurtzite and the preferred orientation changed with the sputtering pressure;the surface morphology greatly depended on the sputtering pressure and the film deposited at 1.4 Pa showed low resistivity（8.4×10.4 Ω·cm）,high average transmission and the highest Q,a criterion factor as the film figure of merit,which was the ratio between the normalizedaverage transmission and the normalized resistivity.

关 键 词：ZNO:AL薄膜 直流磁控溅射 溅射气压 光电性质 

分 类 号：TB34[一般工业技术—材料科学与工程]