InP衬底上晶格匹配四元系InAlGaAs的气态源分子束外延生长(英文)  

Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE

作　　者：王凯[1,2] 顾溢[1,3] 方祥[1,2] 周立[1,2] 李成[1,2] 李好斯白音 张永刚[1,3] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049 [3]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2012年第5期385-388,398,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Basic Research Program of China(2012CB619202);Founding of Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences and Innovative Founding of Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

摘　　要：采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In-AlGaAs材料性质进行了表征。摇摆曲线结果表明,根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配.光致发光和霍尔测试结果显示随着Al组分的增加,样品的光致发光强度、电子浓度和迁移率均有所下降.样品的三族元素组分由光致发光及X射线衍射实验获得,测试结果与设计值吻合,Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法.Properties of quaternary InAlGaAs alloys prepared by gas source MBE growth have been investigated with high resolution X-ray diffraction rocking curves, photoluminescence and Hall measurements. X-ray rocking curves show that all the samples are well matched to InP substrate according to calibration data. The photoluminescence and Hall measurement show that the PL intensity, electron concentration and mobility decrease distinctly as Al composition increases. The group III compositions are determined from both photoluminescence and x-ray diffraction measurements, and agreed well with the designed values. The relationship between the designed Al compositions and measured values provides us a practical way for the precise composition control.

关 键 词：化合物半导体 分子束外延 InAlGaAs X射线衍射 光致发光 

分 类 号：TN2[电子电信—物理电子学]