反应离子刻蚀法制备石英纳米压印模板的工艺研究  

Preparation and Characterization of Nanoimprint Template on Quartz by Reactive Ion Etching

作　　者：张少峰[1] 刘正堂[1] 李阳平[1] 陈海波[1] 徐启远[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《机械科学与技术》2012年第11期1786-1789,共4页Mechanical Science and Technology for Aerospace Engineering

基　　金：航空科学基金项目(2008ZE53043)资助

摘　　要：为了使用紫外纳米压印法制备出亚波长结构,研究了在石英衬底上采用光刻和反应离子刻蚀技术制备出紫外纳米压印模板,以及模板制备过程中工艺参数对光刻胶和刻蚀速率的影响。利用激光共聚焦显微镜(LSCM)及原子力显微镜(AFM)对光刻和刻蚀图形的表面形貌进行了观察,获得了工艺参数对光刻胶掩膜图形和刻蚀图形的影响规律;在最优工艺参数条件下,所制紫外纳米压印模板整齐、规则,并利用紫外可见近红外光谱仪对其紫外透过率进行了表征,反应离子刻蚀后石英模板的透过率在365 nm处仍大于90%。For fabricating sub-wavelength structure by nanoimprint lithography, the templates for ultraviolet （UV） nanoimprint lithography were prepared by the lithography and the reactive ion etching （RIE） technology on quartz substrates and the influence of the process parameters on photoresist and etching rate was investigated. The surface micrograph of the etched patterns was observed by laser scanning confocal microscope （LSCM） and atomic force microscope （AFM）. It is shown that the UV nanoimprint lithography templates fabricated in this work at the opti- mum process parameter are highly uniform and symmetrical. The UV transmittance properties of the templates were measured by a scanning spectrophotometer. The results demonstrate that the UV transmittance of the etched tem- plate is still over 90% at the wavelength of 365 nm.

关 键 词：光刻 反应离子刻蚀 刻蚀速率 亚波长结构 紫外纳米压印 

分 类 号：TN305.7[电子电信—物理电子学]