GeSi MOSFET的纵向结构对器件性能的影响  

The Influence of GeSi MOSFET Longitudinal Structure on Device Performance

作　　者：董志伟[1] 黎晨[1] 陈培毅[1] 钱佩信[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《电子学报》2000年第8期139-141,共3页Acta Electronica Sinica

基　　金：国家自然科学基金!(No.698360 2 0 );国家九五重点科技项目!(攻关 )计划课题 97 760 0 3 0 1

摘　　要：为了研究器件参数对GeSiMOSFET器件性能的影响 ,本文在建立一个简单的GeSiMOSFET的器件模型的基础上 ,对GeSiMOSFET的纵向结构进行了系统的理论分析 .确定了纵向结构的CAP层厚度、沟道层载流子面密度、DELTA掺杂浓度以及量子阱阱深之间的关系 ,得出了阈值电压与DELTA掺杂浓度、栅氧化层厚度及CAP层厚度之间的关系 ,还得出了栅压与沟道载流子面密度、栅氧化层厚度及CAP层厚度之间的关系 .并且在此基础上得出了一些有意义的结果 .为了更细致、精确地进行分析 ,我们分别对GeSiPMOSFET和GeSiNMOSFET在MEDICI上做了模拟 .This paper developed a simple GeSi MOSFET device model,and based on this model,we analyzed the influence of GeSi MOSFET longitudinal structure on device performance.Then the relation of the thickness of cap layer,the carrier density in channel,and the density of delta doped ion on the barrier height Φw of quantum well in channel layer are deduced.Also the relation of the density of delta doped ion,the thickness of gate oxide layer and the thickness of cap layer on the threshold voltage and the relation of the gate voltage on the carrier density in channel are derived.After these analyses,we get several valuable results for our further research.Because of the assumptions in this model,these results are not precise but instructional.In order to get precise results,we simulated the structures of GeSi PMOSFET and GeSi NMOSFET by MEDICI.

关 键 词：GESI MOSFET 纵向结构 

分 类 号：TN386.1[电子电信—物理电子学]