溅射气压对非晶Hg_(1-x)Cd_x Te薄膜微观结构和化学组分的影响(英文)  

Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg_(1-x)Cd_x Te Films

作　　者：王光华[1] 孔金丞[1] 李雄军[1] 杨丽丽[1] 赵惠琼[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《发光学报》2012年第11期1224-1231,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60576069);国家火炬计划(2011GH011928)资助项目

摘　　要：采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。Mercury cadmium telluride films were prepared by RF magnetron sputtering technique at different sputtering pressure on glass substrate.In experiment,X-ray diffraction （XRD）,atomic force microscopy （AFM） and energy dispersive spectroscopy （EDS） have been used to characterize the microstructure,surface morphology and chemical composition of Hg1-xCdxTe films.Experimental results show that the growth rate,crystal structure,chemical composition content and surface morphology of the Hg1-xCdxTe films have a strong relation to the sputtering pressure.When increased the sputtering pressure,the growth rate of films decreased.When the sputtering pressure was more than 1.1 Pa,the prepared Hg1-xCdxTe film was amorphous,and when the sputtering pressure was controlled at 0.9 Pa,the films exhibited polycrystalline structure.In addition,the surface roughness （RMS and Ra） of Hg1-xCdxTe films gradually decreased with the increasing of sputtering pressure.The chemical composition of films also varing with different sputtering pressure,the Hg and Hg＋Cd content in films reache the lowest,but the Cd content gets to the top at 1.1 Pa.

关 键 词：碲镉汞薄膜 非晶半导体 微观结构 表面形貌 磁控溅射 

分 类 号：O472.8[理学—半导体物理]