偏置条件对SOI NMOS器件总剂量辐照效应的影响  

The total dose irradiation effects of SOI NMOS devices under different bias conditions

作　　者：卓青青[1] 刘红侠[1] 杨兆年[1] 蔡惠民[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2012年第22期167-172,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076097;60936005);教育部科技创新工程重大项目培育资金(批准号:708083);中央高校基本科研业务费专项资金(批准号:200110203110012)资助的课题~~

摘　　要：本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形.Based on 0.8 pm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad （Si）/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.

关 键 词：总剂量辐照效应 泄漏电流 栅偏置条件 碰撞电离 

分 类 号：TN386[电子电信—物理电子学]