8.9W/mm高功率密度SiC MESFET器件研制  

Research on S-Band SiC MESFET with High Power Density of 8.9 W/mm

作　　者：李亮[1] 默江辉[1] 邓小川[2] 李佳[1] 冯志红[1] 崔玉兴[3] 付兴昌[3] 蔡树军[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]电子科技大学,成都610054 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第1期20-24,共5页Semiconductor Technology

摘　　要：基于自主研发的碳化硅(SiC)材料外延技术,优化了材料各层结构及参数,减小了Al记忆效应,最终得到了高质量SiC外延片。采用自主研发成熟的SiC MESFET工艺平台,制作了多凹栅器件结构,优化了凹槽尺寸,采用细栅制作技术完成了栅电极制作,最终得到了不同栅宽的SiC MESFET芯片。突破了大栅宽芯片流片、封装及大功率脉冲测试技术,研制成功了微波功率特性良好的MESFET器件。微波测试结果表明,在2 GHz脉冲条件下,0.25 mm栅宽器件,输出功率密度达到8.96 W/mm,功率附加效率达到30%。单胞20 mm大栅宽器件,3.4 GHz脉冲条件下,功率输出达到94 W,功率附加效率达到22.4%。The structure and parameters of the SiC material were optimized by using the owned epitaxial technique. The A1 The die of SiC microwave memory effect became weak and metal semiconductor field-effect the well epitaxial was fabricated finally. transistor （MESFET） was successfully fabricated by using owned conventional process, which includes the optimizing multiple recess gate and small size gate. The device was got by breaking through the manufacture of die with large width and high pulse power test technique. The device with 0.25 mm gate-width shows a pulsed output power density of 8.96 W /ram, with a power add efficiency of 30% at 2 GHz. The device with 20 mm gate-width shows a pulsed output power of 94 W, with a power add efficiency of 22.4% at 3.4 GHz

关 键 词：碳化硅 微波 金属半导体场效应晶体管 功率密度 脉冲 

分 类 号：TN304.24[电子电信—物理电子学] TN323.4