MOCVD脉冲生长对InGaN太阳能电池材料的影响  

Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials

作　　者：贾文博[1] 李培咸[1] 周小伟[1] 杨扬[1] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071

出　　处：《电子科技》2013年第1期10-11,共2页Electronic Science and Technology

摘　　要：通过对InGaN三元合金的生长方式做对比,发现在相同条件下,因常规生长过程中反应室In的浓度更高,生长出的InGaN中In组分更高。但是由于预反应的原因晶体质量较差,而脉冲生长由于源的分时输运,大幅减小了预反应的发生,提高了晶体质量。但由于生长时反应室In原子浓度变小,In的组分会降低,也会减小In滴的析出。In this paper, the methods of InGaN alloy growth are compared. It is found that by conventional method the InGaN alloy tends to have a higher component because of a higher concentration of In atoms in the cham- ber but results in a poor crystallization quality as the pre-reaction. The one grown by pulse method tends to have a lower component of In and In drop because of a lower concentration of In atoms in the chamber but results in a good crystallization quality as the reduction of pre-reaction.

关 键 词：INGAN 脉冲生长 太阳能电池 MOCVD 

分 类 号：TN304.23[电子电信—物理电子学]