1.3μm InGaAsP/InP全金属化耦合封装侧面发光二极管  

1. 3 μm Wavelength InGaAsP/InP Full metalfization Coupling Packaged Edge--Emitting LED

作　　者：朱志文[1] 李金良[1] 计敏[1] 伍锋 邓履清 杨璠[1] 

机构地区：[1]重庆光电技术研究所,重庆永川632163

出　　处：《半导体光电》1991年第2期128-132,共5页Semiconductor Optoelectronics

摘　　要：本文报导1.3μm InGaAsP/InP内条限制部分注入全金属化耦合封装侧面发光二极管的结构、制作及器件特性。在100mA工作电流下,器件尾纤出纤功率典型值40μW,最大超过60μW,光谱宽度70nm,上升/下降时间小于2.5ns。该器件是中短距离,中小容量光纤通信系统和光测量系统的理想光源。The structure, fabrication and performance of 1.3 μm wave length InGaAsP/InP inner-confined and part-injected full metallization coupling packa- ged edge-emitting LED are reported. At injection current of 100 mA, the pig- tail fiber output power of over 60 μW (with typical value of 40μW)can be ob- tained with the spectral width of 70 nm,and the rise/fall time<2.5 ns. This LED is an ideal light source for optical fiber communication systems with medium and short distance as well as for light measurement systems.

关 键 词：光纤通信 发光二极管 金属化 封装 

分 类 号：TN929.11[电子电信—通信与信息系统]