InGaAs/InP-SAGM-APD结构的液相外延生长研究  

Research on LPE Growth for InGaAs/InP SAGM--APD

作　　者：杨志鸿[1] 王树堂[1] 曾靖[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《半导体光电》1991年第2期141-145,共5页Semiconductor Optoelectronics

摘　　要：本文讨论了InP/InGaAsP/InGaAs/InP SAGM-APD结构的抗回熔生长,并解决了InP在InGaAs上液相外延生长时的回熔问题。同时,研究了各外延层参数的控制。结果制得的器件,其最大雪崩倍增20,0.9V_B下暗电流14nA,响应度大于0.6A/W。The anti-meltback growth of InP/InGaAsP/InGaAs/InP layers for SAGM-APD is discussed. Problem of meltback during LPE growth of final InP on InGaAs is solved. The parameter control for each layer is investigated. As a result, SAGM-APD has maximum avalanch gain of 20, dark current of 14nA at 0.9V_B, and responsivity over 0.6A/W.

关 键 词：INGAAS/INP 液相外延 外延层生长 

分 类 号：TN304.054[电子电信—物理电子学]